Low Cost

Small cell size, multiple levels, and process technology scalability result in high density and low cost.

Low Power

Our charge transport is accomplished through protons which are very light compared to heavier ions.

High Speed

Moving light-weight protons across very short distances results in very fast switching.

Non-Volatile

Memory states are stable for years without power.

Multi-Level

Our quantum materials have exhibited the highest known resistance switching ratio. This allows many distinct resistance levels and significantly increases memory density.

3D Scalable

The QRAM cells can be stacked and arranged in a 3D lattice increasing capacity.

Durable